IPB160N04S2L-03 Datasheet, PDF (1/8 Pages) Infineon Technologies AG – OptiMOS® - T Power-Transistor

OptiMOS^® - T Power-Transistor
Features
• N-channel Logic Level - Enhancement mode
• Automotive AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green package (lead free)
• Ultra low Rds(on)
• 100% Avalanche tested
IPB160N04S2L-03
Product Summary
V _DS
R _DS(on),max
I_D
40 V
2.7 mΩ
160 A
PG-TO263-7-3
Type
IPB160N04S2L-03
Package
PG-TO263-7-3
Ordering Code Marking
SP0002-18153 P2N04L03
Maximum ratings, at T _j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
Pulsed drain current²⁾
I_D
I _D,pulse
T _C=25 °C
T _C=100 °C²⁾
T _C=25 °C
Avalanche energy, single pulse
E _AS
I _D=80 A, R _GS=25 Ω
V _GS
Power dissipation
P _tot
T _C=25 °C
Operating and storage temperature T _j, T _stg
IEC climatic category; DIN IEC 68-1
Value
Unit
160
A
160
640
810
mJ
±20
V
300
W
-55 ... 175
°C
55/175/56
Rev. 1.0
page 1
2006-03-02