IPB144N12N3G Datasheet, PDF (1/11 Pages) Infineon Technologies AG – OptiMOS™3 Power-Transistor

IPB144N12N3 G
IPI147N12N3 G IPP147N12N3 G
OptiMOS^™3 Power-Transistor
Features
• N-channel, normal level
• Excellent gate charge x R _DS(on) product (FOM)
• Very low on-resistance R _DS(on)
Product Summary
V _DS
R _DS(on),max
I_D
120 V
14.7 mΩ
56 A
• 175 °C operating temperature
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC¹⁾ for target application
• Ideal for high-frequency switching and synchronous rectification
• Halogen-free according to IEC61249-2-21
Type
IPB144N12N3 G IPI147N12N3 G
IPP147N12N3 G
Package
Marking
PG-TO263-3
144N12N
PG-TO262-3
147N12N
PG-TO220-3
147N12N
Maximum ratings, at T _j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Value
Continuous drain current
I_D
T _A=25 °C,
R _thJA=45 K/W
T _C=100 °C
Pulsed drain current²⁾
I _D,pulse
I _D=56 A, V _DS=80 V,
di /dt =100 A/µs,
T _j,max=175 °C
Avalanche energy, single pulse
E _AS
I _D=56 A, R _GS=25 Ω
Gate source voltage³⁾
V _GS
Power dissipation
P _tot
T _C=25 °C
Operating and storage temperature T _j, T _stg
IEC climatic category; DIN IEC 68-1
1)_{J-STD20 and JESD22}
2) _{see figure 3}
3) _{Tjmax=150°C and duty cycle D=0.01 for Vgs<-5V}
Rev. 2.6
page 1
56
41
224
90
±20
107
-55 ... 175
55/175/56
Unit
A
mJ
V
W
°C
2010-01-22