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IPB140N08S4-04 Datasheet, PDF (1/9 Pages) Infineon Technologies AG – N-channel - Enhancement mode
OptiMOS™-T2 Power-Transistor
Features
• N-channel - Enhancement mode
• AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green Product (RoHS compliant)
• 100% Avalanche tested
IPB140N08S4-04
Product Summary
V DS
R DS(on),max
ID
80 V
4.2 mW
140 A
PG-TO263-7-3
Type
IPB140N08S4-04
Package
PG-TO263-7-3
Marking
4N0804
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current
ID
T C=25°C, V GS=10V
T C=100°C, V GS=10V2)
Pulsed drain current1)
Avalanche energy, single pulse1)
Avalanche current, single pulse
Gate source voltage
Power dissipation
Operating and storage temperature
I D,pulse T C=25°C
E AS
I D=70A
I AS
-
V GS
-
P tot
T C=25°C
T j, T stg -
Value
140
100
560
212
87
±20
161
-55 ... +175
Unit
A
mJ
A
V
W
°C
Rev. 1.0
page 1
2014-06-20