IPB12CNE8N_07 Datasheet, PDF (1/12 Pages) Infineon Technologies AG – OptiMOS Power-Transistor Feature Enhancement mode Logic Level Avalanche rated

IPB12CNE8N G IPD12CNE8N G
IPI12CNE8N G IPP12CNE8N G
OptiMOS^®2 Power-Transistor
Features
• N-channel, normal level
• Excellent gate charge x R _DS(on) product (FOM)
• Very low on-resistance R _DS(on)
Product Summary
V _DS
R _DS(on),max (TO252)
I_D
85 V
12.4 m:
67 A
• 175 °C operating temperature
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC¹⁾ for target application
• Ideal for high-frequency switching and synchronous rectification
Type
IPB12CNE8N G
IPD12CNE8N G
IPI12CNE8N G
IPP12CNE8N G
Package
Marking
PG-TO263-3
12CNE8N
PG-TO252-3
12CNE8N
PG-TO262-3
12CNE8N
PG-TO220-3
12CNE8N
Maximum ratings, at T _j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Value
Unit
Continuous drain current
Pulsed drain current²⁾
Avalanche energy, single pulse
Reverse diode dv /dt
Gate source voltage³⁾
Power dissipation
Operating and storage temperature
I_D
T _C=25 °C
T _C=100 °C
I _D,pulse T _C=25 °C
E _AS
I _D=67 A, R _GS=25 :
dv /dt
I _D=67 A, V _DS=68 V,
di /dt =100 A/μs,
T _j,max=175 °C
V _GS
P _tot
T _C=25 °C
T _j, T _stg
IEC climatic category; DIN IEC 68-1
1)_{J-STD20 and JESD22}
2) _{see figure 3}
3) _{Tjmax=150°C and duty cycle D=0.01 for Vgs<-5V}
Rev. 1.05
page 1
67
48
268
154
6
±20
125
-55 ... 175
55/175/56
A
mJ
kV/μs
V
W
°C
2007-08-29