IPB120P04P4-04 Datasheet, PDF (1/9 Pages) Infineon Technologies AG – OptiMOS-P2 Power-Transistor

OptiMOS^®-P2 Power-Transistor
Features
• P-channel - Normal Level - Enhancement mode
• AEC qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green package (RoHS compliant)
• 100% Avalanche tested
IPB120P04P4-04
IPI120P04P4-04, IPP120P04P4-04
Product Summary
V _DS
R _DS(on) (SMD Version)
I_D
-40 V
3.5 mW
-120 A
PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1
Type
IPB120P04P4-04
IPI120P04P4-04
IPP120P04P4-04
Package
PG-TO263-3-2
PG-TO262-3-1
PG-TO220-3-1
Marking
4P0404
4P0404
4P0404
Maximum ratings, at T _j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current¹⁾
I_D
T _C=25°C,
V _GS=-10V
T _C=100°C,
V _GS=-10V²⁾
Pulsed drain current²⁾
I _D,pulse T _C=25°C
Avalanche energy, single pulse
E _AS
I _D=-60A
Avalanche current, single pulse
I _AS
-
Gate source voltage
V _GS
-
Power dissipation
P _tot
T _C=25 °C
Operating and storage temperature T _j, T _stg -
IEC climatic category; DIN IEC 68-1 -
-
Rev. 1.0
page 1
Value
Unit
-120
A
-110
-480
78
mJ
-120
A
±20
V
136
W
-55 ... +175
°C
55/175/56
2011-02-14