IPB120N03S4L-03 Datasheet, PDF (1/9 Pages) Infineon Technologies AG – N-channel - Enhancement mode

OptiMOS^™-T2 Power-Transistor
Features
• N-channel - Enhancement mode
• Automotive AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green package (lead free)
• 100% Avalanche tested
IPB120N03S4L-03
Product Summary
V _DS
R _DS(on),max
I_D
30 V
3 mW
120 A
PG-TO263-3-2
Type
IPB120N03S4L-03
Package
PG-TO263-3-2
Ordering Code Marking
-
4N03L03
Maximum ratings, at T _j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current¹⁾
I_D
T _C=25°C, V _GS=10V
T _C=100°C, V _GS=10V²⁾
Pulsed drain current²⁾
I _D,pulse T _C=25°C
Avalanche energy, single pulse
E _AS
I _D=60A
Avalanche current, single pulse
I _AS
-
Gate source voltage
V _GS
Power dissipation
P _tot
T _C=25°C
Operating and storage temperature T _j, T _stg
IEC climatic category; DIN IEC 68-1
Value
120
88
480
75
120
±16
79
-55 ... +175
55/175/56
Unit
A
mJ
A
V
W
°C
Rev. 1.1
page 1
2014-04-28