IPB108N15N3G Datasheet, PDF (1/11 Pages) Infineon Technologies AG – OptiMOSTM3 Power-Transistor Features Excellent gate charge x R DS(on) product (FOM)

IPB108N15N3 G IPP111N15N3 G
IPI111N15N3 G
OptiMOS^TM3 Power-Transistor
Features
• N-channel, normal level
• Excellent gate charge x R _DS(on) product (FOM)
• Very low on-resistance R _DS(on)
Product Summary
V _DS
R _{DS(on),max (TO263)}
I_D
150 V
10.8 mΩ
83 A
• 175 °C operating temperature
• Pb-free lead plating; RoHS compliant; Halogen free
• Qualified according to JEDEC¹⁾ for target application
• Ideal for high-frequency switching and synchronous rectification
•Halogen-free according to IEC61249-2-21
Type
IPB108N15N3 G IPP111N15N3 G IPI111N15N3 G
Package
Marking
PG-TO263-3
108N15N
PG-TO220-3
111N15N
PG-TO262-3
111N15N
Maximum ratings, at T _j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Value
Continuous drain current
I_D
T _C=25 °C
T _C=100 °C
Pulsed drain current²⁾
I _D,pulse T _C=25 °C
Avalanche energy, single pulse
E _AS
I _D=83 A, R _GS=25 Ω
Gate source voltage
V _GS
Power dissipation
P _tot
T _C=25 °C
Operating and storage temperature T _j, T _stg
IEC climatic category; DIN IEC 68-1
1)_{J-STD20 and JESD22}
2) _{See figure 3}
83
59
332
330
±20
214
-55 ... 175
55/175/56
Unit
A
mJ
V
W
°C
Rev. 2.1
page 1
2009-12-01