IPB107N20N3G_11 Datasheet, PDF (1/11 Pages) Infineon Technologies AG – OptiMOSTM3 Power-Transistor

IPB107N20N3 G IPP110N20N3 G
IPI110N20N3 G
OptiMOS^TM3 Power-Transistor
Features
• N-channel, normal level
• Excellent gate charge x R _DS(on) product (FOM)
• Very low on-resistance R _DS(on)
Product Summary
V_DS
R_{DS(on),max (TO263)}
I_D
200 V
10.7 mW
88 A
• 175 °C operating temperature
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC¹⁾ for target application
• Halogen-free according to IEC61249-2-21
• Ideal for high-frequency switching and synchronous rectification
Type
IPB107N20N3 G IPP110N20N3 G IPI110N20N3 G
Package
Marking
PG-TO263-3
107N20N
PG-TO220-3
110N20N
PG-TO262-3
110N20N
Maximum ratings, at T _j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Value
Continuous drain current
Pulsed drain current²⁾
I_D
I _D,pulse
T _C=25 °C
T _C=100 °C
T _C=25 °C
Avalanche energy, single pulse
E _AS
I _D=80 A, R _GS=25 W
Reverse diode dv /dt
dv /dt
Gate source voltage
V _GS
Power dissipation
Operating and storage temperature
P _tot
T _C=25 °C
T _j, T _stg
IEC climatic category; DIN IEC 68-1
1)_{J-STD20 and JESD22}
2) _{See figure 3}
88
63
352
560
10
±20
300
-55 ... 175
55/175/56
Unit
A
mJ
kV/µs
V
W
°C
Rev. 2.3
page 1
2011-07-14