IPB100N04S3-03 Datasheet, PDF (1/9 Pages) Infineon Technologies AG – OptiMOS-T Power-Transistor

OptiMOS^®-T Power-Transistor
Features
• N-channel - Enhancement mode
• Automotive AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green package (RoHS compliant)
• Ultra low Rds(on)
• 100% Avalanche tested
IPB100N04S3-03
IPI100N04S3-03, IPP100N04S3-03
Product Summary
V _DS
R _DS(on) (SMD Version)
I_D
40 V
2.5 mΩ
100 A
PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1
Type
IPB100N04S3-03
IPI100N04S3-03
IPP100N04S3-03
Package
PG-TO263-3-2
PG-TO262-3-1
PG-TO220-3-1
Marking
3PN0403
3PN0403
3PN0403
Maximum ratings, at T _j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current
I_D
T _C=25°C, V _GS=10V¹⁾
Value
Unit
100
A
T _C=100°C, V _GS=10V²⁾
100
Pulsed drain current²⁾
I _D,pulse T _C=25 °C
Avalanche energy, single pulse
E _AS
I _D=80 A
Gate source voltage
V _GS
Power dissipation
P _tot
T _C=25 °C
Operating and storage temperature T _j, T _stg
IEC climatic category; DIN IEC 68-1
400
898
mJ
±20
V
214
W
-55 ... +175
°C
55/175/56
Rev. 1.0
page 1
2007-05-03