IPB08CN10NG_10 Datasheet, PDF (1/11 Pages) Infineon Technologies AG – OptiMOS™2 Power-Transistor Features Excellent gate charge x R DS(on) product (FOM)

IPB08CN10N G
IPI08CN10N G IPP08CN10N G
OptiMOS^™2 Power-Transistor
Features
• N-channel, normal level
• Excellent gate charge x R _DS(on) product (FOM)
• Very low on-resistance R _DS(on)
Product Summary
V _DS
R _{DS(on),max (TO263)}
I_D
100 V
8.2 mΩ
95 A
• 175 °C operating temperature
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC¹⁾ for target application
• Ideal for high-frequency switching and synchronous rectification
• Halogen-free according to IEC61249-2-21
Type
IPB08CN10N G
IPI08CN10N G
IPP08CN10N G
Package
Marking
PG-TO263-3
08CN10N
PG-TO262-3
08CN10N
PG-TO220-3
08CN10N
Maximum ratings, at T _j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Value
Continuous drain current
I_D
T _C=25 °C
T _C=100 °C
Pulsed drain current²⁾
I _D,pulse T _C=25 °C
Avalanche energy, single pulse
E _AS
I _D=95 A, R _GS=25 Ω
Reverse diode dv /dt
dv /dt
I _D=95 A, V _DS=80 V,
di /dt =100 A/µs,
T _j,max=175 °C
Gate source voltage³⁾
V _GS
Power dissipation
P _tot
T _C=25 °C
Operating and storage temperature T _j, T _stg
IEC climatic category; DIN IEC 68-1
95
68
380
262
6
±20
167
-55 ... 175
55/175/56
Unit
A
mJ
kV/µs
V
W
°C
Rev. 1.08
page 1
2010-04-26