IPB085N06LG Datasheet, PDF (1/10 Pages) Infineon Technologies AG – OptiMOS® Power-Transistor

OptiMOS^® Power-Transistor
Features
• For fast switching converters and sync. rectification
• N-channel enhancement - logic level
• 175 °C operating temperature
• Avalanche rated
• Pb-free lead plating, RoHS compliant
IPB085N06L G IPP085N06L G
Product Summary
V _DS
R _{DS(on),max SMD version}
I_D
60 V
8.2 mΩ
80 A
Type
IPB085N06L G
IPP085N06L G
Type
IPPaBc0k8a5gNe06L G
IMPaPr0k8in5gN06L G
Package
P-TOP2-6T3O-32-623-3-2
085NP0-6TLO220-3-1
Marking
P-0T8O5N22006-L3-1
08058N5N060L6L
Maximum ratings, at T _j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
I_D
T _C=25 °C¹⁾
Pulsed drain current
I _D,pulse
T _C=100 °C
T _C=25 °C²⁾
Avalanche energy, single pulse
E _AS
I _D=80 A, R _GS=25 Ω
Reverse diode dv /dt
dv /dt
I _D=80 A, V _DS=48 V,
di /dt =200 A/µs,
T _j,max=175 °C
Gate source voltage
V _GS
Power dissipation
P _tot
T _C=25 °C
Operating and storage temperature T _j, T _stg
IEC climatic category; DIN IEC 68-1
Value
80
76
320
370
6
±20
188
-55 ... 175
55/175/56
1) _{Current is limited by bondwire; with an R thJC=0.8 K/W the chip is able to carry 97 A.}
2) _{See figure 3}
Unit
A
mJ
kV/µs
V
W
°C
Rev. 1.01
page 1
2006-06-13