IPB080N06NG Datasheet, PDF (1/10 Pages) Infineon Technologies AG – OptiMOS® Power-Transistor

OptiMOS^® Power-Transistor
Features
• Low gate charge for fast switching applications
• N-channel enhancement - normal level
• 175 °C operating temperature
• Avalanche rated
• Pb-free lead plating, RoHS compliant
IPB080N06N G IPP080N06N G
Product Summary
V _DS
R _{DS(on),max SMDversion}
I_D
60 V
7.7 mΩ
80 A
Type
IPB080N06N G
IPP080N06N G
Package
Marking
P-TO263-3-2
080N06N
P-TO220-3-1
080N06N
Maximum ratings, at T _j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
I_D
T _C=25 °C¹⁾
Pulsed drain current
I _D,pulse
T _C=100 °C
T _C=25 °C²⁾
Avalanche energy, single pulse
E _AS
I _D=80 A, R _GS=25 Ω
Reverse diode dv /dt
dv /dt
I _D=80 A, V _DS=48 V,
di /dt =200 A/µs,
T _j,max=175 °C
Gate source voltage
V _GS
Power dissipation
P _tot
T _C=25 °C
Operating and storage temperature T _j, T _stg
IEC climatic category; DIN IEC 68-1
Value
80
76
320
448
6
±20
214
-55 ... 175
55/175/56
1) _{Current is limited by bondwire; with an R thJC=0.7 K/W the chip is able to carry 107 A.}
2) _{See figure 3}
Unit
A
mJ
kV/µs
V
W
°C
Rev. 1.01
page 1
2006-05-02