IPB073N15N5 Datasheet, PDF (1/11 Pages) Infineon Technologies AG – OptiMOSª5 Power-Transistor, 150 V

IPB073N15N5
MOSFET
OptiMOS^ª5Power-Transistor,150V
Features
•ExcellentgatechargexRDS(on)product(FOM)
•Verylowon-resistanceRDS(on)
•Verylowreverserecoverycharge(Qrr)
•175°Coperatingtemperature
•Pb-freeleadplating;RoHScompliant
•QualifiedaccordingtoJEDEC¹⁾fortargetapplication
•Idealforhigh-frequencyswitchingandsynchronousrectification
•Halogen-freeaccordingtoIEC61249-2-21
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS
150
V
RDS(on),max(TO263)
7.3
mΩ
ID
114
A
Qrr
96
nC
D²PAK
Drain
Pin 2, Tab
Gate
Pin 1
Source
Pin 3
Type/OrderingCode
IPB073N15N5
Package
PG-TO 263
Marking
073N15N5
RelatedLinks
-
1) _{J-STD20 and JESD22}
Final Data Sheet
1
Rev.2.0,2016-03-17