IPB070N06NG Datasheet, PDF (1/10 Pages) Infineon Technologies AG – OptiMOS® Power-Transistor

OptiMOS^® Power-Transistor
Features
• Low gate charge for fast switching applications
• N-channel enhancement - normal level
• 175 °C operating temperature
• Avalanche rated
• Pb-free lead plating, RoHS compliant
IPB070N06N G IPP070N06N G
Product Summary
V _DS
R _{DS(on),max SMDversion}
I_D
60 V
6.7 mΩ
80 A
Type
IPB070N06N G
IPP070N06N G
Type
IPPaBc0k6a6gNe06N G
IMPaPr0k6in6gN06N G
Package
P-TOP2-6T3O-32-623-3-2
070NP0-6TNO220-3-1
Marking
P-0T6O6N22006-N3-1
07006N6N060N6N
Maximum ratings, at T _j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
I_D
T _C=25 °C¹⁾
Pulsed drain current
I _D,pulse
T _C=100 °C
T _C=25 °C²⁾
Avalanche energy, single pulse
E _AS
I _D=80 A, R _GS=25 Ω
Reverse diode dv /dt
dv /dt
I _D=80 A, V _DS=48 V,
di /dt =200 A/µs,
T _j,max=175 °C
Gate source voltage
V _GS
Power dissipation
P _tot
T _C=25 °C
Operating and storage temperature T _j, T _stg
IEC climatic category; DIN IEC 68-1
Value
80
80
320
530
6
±20
250
-55 ... 175
55/175/56
1) _{Current is limited by bondwire; with an R thJC=0.6 K/W the chip is able to carry 127 A.}
2) _{See figure 3}
Unit
A
mJ
kV/µs
V
W
°C
Rev. 1.01
page 1
2006-06-19