IPB065N06LG Datasheet, PDF (1/10 Pages) Infineon Technologies AG – OptiMOS® Power-Transistor

OptiMOS^® Power-Transistor
Features
• For fast switching converters and sync. rectification
• N-channel enhancement - logic level
• 175 °C operating temperature
• Avalanche rated
• Pb-free lead plating, RoHS compliant
IPB065N06L G IPP065N06L G
Product Summary
V _DS
R _DS(on),max
I_D
60 V
6.5 mΩ
80 A
Type
IPB065N06L G
IPP065N06L G
Type
IPPaBc0k6a3gNe06L G
IMPaPr0k6in3gN06L G
Package
Marking
PG-TPO-T26O32-633-2-3-2 PG06-T3NO0262L0-3-1
065NP0P6-LTO220-3-1 06056N3N060L6L
Maximum ratings, at T _j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
I_D
T _C=25 °C¹⁾
Pulsed drain current
I _D,pulse
T _C=100 °C
T _C=25 °C²⁾
Avalanche energy, single pulse
E _AS
I _D=80 A, R _GS=25 Ω
Reverse diode dv /dt
dv /dt
I _D=80 A, V _DS=48 V,
di /dt =200 A/µs,
T _j,max=175 °C
Gate source voltage
V _GS
Power dissipation
P _tot
T _C=25 °C
Operating and storage temperature T _j, T _stg
IEC climatic category; DIN IEC 68-1
Value
80
80
320
530
6
±20
250
-55 ... 175
55/175/56
1) _{Current is limited by bondwire; with an R thJC=0.6 K/W the chip is able to carry 125 A.}
2) _{See figure 3}
Unit
A
mJ
kV/µs
V
W
°C
Rev. 1.1
page 1
2006-05-05