IPB057N06N Datasheet, PDF (1/9 Pages) Infineon Technologies AG – OptiMOSTM Power-Transistor

Type
OptiMOS^TM Power-Transistor
Features
• Optimized for synchronous rectification
• 100% avalanche tested
• Superior thermal resistance
• N-channel, normal level
• Qualified according to JEDEC¹⁾ for target applications
• Pb-free lead plating; RoHS compliant
• Halogen-free according to IEC61249-2-21
Product Summary
V_DS
R_DS(on),max
I_D
Q_oss
Q_g(0V..10V)
IPB057N06N
60
V
5.7
mW
45
A
32
nC
27
nC
PG-TO263-3
Type
IPB057N06N
Package
PG-TO263-3
Marking
057N06N
Maximum ratings, at T _j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Value
Unit
Continuous drain current
I_D
V _GS=10 V, T _C=25 °C
V _GS=10 V, T _C=100 °C
45
A
45
V _GS=10 V, T _C=25 °C,
R _thJA =50K/W
17
Pulsed drain current²⁾
I _D,pulse T _C=25 °C
180
Avalanche energy, single pulse³⁾
E _AS
I _D=45 A, R _GS=25 W
60
mJ
Gate source voltage
V _GS
±20
V
1) _{J-STD20 and JESD22}
2) _{See figure 3 for more detailed information}
3) _{See figure 13 for more detailed information}
4) _{Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm}2 _{(one layer, 70 µm thick) copper area for drain}
connection. PCB is vertical in still air.
Rev.2.2
page 1
2012-12-20