IPB051NE8NG_10 Datasheet, PDF (1/11 Pages) Infineon Technologies AG – OptiMOS™2 Power-Transistor Features N-channel, normal level 175 °C operating temperature

IPB051NE8N G IPI05CNE8N G
IPP054NE8N G
OptiMOS^™2 Power-Transistor
Features
• N-channel, normal level
• Excellent gate charge x R _DS(on) product (FOM)
• Very low on-resistance R _DS(on)
Product Summary
V _DS
R _{DS(on),max (TO 263)}
I_D
85 V
5.1 mΩ
100 A
• 175 °C operating temperature
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC¹⁾ for target application
• Ideal for high-frequency switching and synchronous rectification
• Halogen-free according to IEC61249-2-21
Type
IPB051NE8N G
IPI05CNE8N G
IPP054NE8N G
Package
Marking
PG-TO263-3
051NE8N
PG-TO262-3
05CNE8N
PG-TO220-3
054NE8N
Maximum ratings, at T _j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
I_D
T _C=25 °C²⁾
T _C=100 °C
Pulsed drain current³⁾
I _D,pulse T _C=25 °C
Avalanche energy, single pulse
E _AS
I _D=100 A, R _GS=25 Ω
Reverse diode dv /dt
dv /dt
I _D=100 A, V _DS=68 V,
di /dt =100 A/µs,
T _j,max=175 °C
Gate source voltage ⁴⁾
V _GS
Power dissipation
P _tot
T _C=25 °C
Operating and storage temperature T _j, T _stg
IEC climatic category; DIN IEC 68-1
Value
100
100
400
826
6
±20
300
-55 ... 175
55/175/56
Unit
A
mJ
kV/µs
V
W
°C
Rev. 1.2
page 1
2010-01-14