IPB04N03LAG Datasheet, PDF (1/9 Pages) Infineon Technologies AG – OptiMOS®2 Power-Transistor

OptiMOS^®2 Power-Transistor
Features
• Ideal for high-frequency dc/dc converters
• Qualified according to JEDEC¹⁾ for target applications
• N-channel - Logic level
• Excellent gate charge x R _DS(on) product (FOM)
• Very low on-resistance R _DS(on)
• Superior thermal resistance
• 175 °C operating temperature
• dv /dt rated
• Pb-free lead plating; RoHS compliant
IPB04N03LA G
Product Summary
V _DS
R _DS(on),max (SMD version)
I_D
25 V
3.9 mΩ
80 A
PG-TO263
Type
IPB04N03LA G
Package
PG-TO263
Marking
04N03LA
Maximum ratings, at T _j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
I_D
T _C=25 °C²⁾
Pulsed drain current
I _D,pulse
T _C=100 °C
T _C=25 °C³⁾
Avalanche energy, single pulse
E _AS
I _D=77 A, R _GS=25 Ω
Reverse diode dv /dt
dv /dt
I _D=80 A, V _DS=20 V,
di /dt =200 A/µs,
T _j,max=175 °C
Gate source voltage⁴⁾
V _GS
Power dissipation
P _tot
T _C=25 °C
Operating and storage temperature T _j, T _stg
IEC climatic category; DIN IEC 68-1
1) _{J-STD20 and JESD22}
Rev. 1.7
page 1
Value
80
80
385
290
6
±20
107
-55 ... 175
55/175/56
Unit
A
mJ
kV/µs
V
W
°C
2006-05-10