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IPB04CN10NG Datasheet, PDF (1/11 Pages) Infineon Technologies AG – OptiMOS™2 Power-Transistor | |||
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IPB04CN10N G IPI04CN10N G
IPP04CN10N G
OptiMOSâ¢2 Power-Transistor
Features
⢠N-channel, normal level
⢠Excellent gate charge x R DS(on) product (FOM)
⢠Very low on-resistance R DS(on)
Product Summary
V DS
R DS(on),max (TO 263)
ID
100 V
3.9 mΩ
100 A
⢠175 °C operating temperature
⢠Pb-free lead plating; RoHS compliant
⢠Qualified according to JEDEC1) for target application
⢠Ideal for high-frequency switching and synchronous rectification
⢠Halogen-free according to IEC61249-2-21
Type
IPB04CN10N G
IPI04CN10N G
IPP04CN10N G
Package
Marking
PG-TO263-3
04CN10N
PG-TO262-3
04CN10N
PG-TO220-3
04CN10N
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
ID
T C=25 °C2)
T C=100 °C
Pulsed drain current3)
I D,pulse T C=25 °C
Avalanche energy, single pulse
Gate source voltage 4)
E AS
V GS
I D=100 A, R GS=25 Ω
Power dissipation
P tot
T C=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
Value
Unit
100
A
100
400
1000
mJ
±20
V
300
W
-55 ... 175
°C
55/175/56
Rev. 1.4
page 1
2010-01-13
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