IPB049NE7N3G Datasheet, PDF (1/9 Pages) Infineon Technologies AG – OptiMOSTM3 Power-Transistor

OptiMOS^TM3 Power-Transistor
Features
• Optimized technology for synchronous rectification
• Ideal for high frequency switching and DC/DC converters
• Excellent gate charge x R _DS(on) product (FOM)
Product Summary
V _DS
R _DS(on),max
I_D
• Very low on-resistance R_DS(on)
• N-channel, normal level
• 100% avalanche tested
• Pb-free plating; RoHS compliant
• Qualified according to JEDEC¹⁾ for target applications
• Halogen-free according to IEC61249-2-21
Type
IPB049NE7N3 G
IPB049NE7N3 G
75 V
4.9 mΩ
80 A
Package
Marking
PG-TO263-3
049NE7N
Maximum ratings, at T _j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
I_D
T _C=25 °C²⁾
T _C=100 °C
Pulsed drain current²⁾
I _D,pulse T _C=25 °C
Avalanche energy, single pulse³⁾
E _AS
I _D=56 A, R _GS=25 Ω
Gate source voltage
V _GS
Power dissipation
P _tot
T _C=25 °C
Operating and storage temperature T _j, T _stg
IEC climatic category; DIN IEC 68-1
1)_{J-STD20 and JESD22}
2) _{See figure 3 for more detailed information}
3) _{See figure 13 for more detailed information}
Rev. 2.2
page 1
Value
Unit
80
A
80
320
370
mJ
±20
V
150
W
-55 ... 175
°C
55/175/56
2010-04-21