IPB049N06L3G Datasheet, PDF (1/10 Pages) Infineon Technologies AG – OptiMOS™3 Power-Transistor

Type
IPB049N06L3 G IPP052N06L3 G
OptiMOS^™3 Power-Transistor
Features
• Ideal for high frequency switching and sync. rec.
• Optimized technology for DC/DC converters
• Excellent gate charge x R _DS(on) product (FOM)
• N-channel, logic level
• 100% avalanche tested
• Pb-free plating; RoHS compliant
• Qualified according to JEDEC¹⁾ for target applications
• Halogen-free according to IEC61249-2-21
Product Summary
V _DS
R _{DS(on),max (SMD)}
I_D
Type
IPB049N06L3 G
IPP052N06L3 G
60 V
4.7 mΩ
80 A
Package
Marking
PG-TO263-3
049N06L
PG-TO220-3
052N06L
Maximum ratings, at T _j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
Pulsed drain current³⁾
Avalanche energy, single pulse⁴⁾
Gate source voltage
Power dissipation
Operating and storage temperature
I_D
T _C=25 °C²⁾
T _C=100 °C
I _D,pulse T _C=25 °C
E _AS
I _D=80 A, R _GS=25 Ω
V _GS
P _tot
T _C=25 °C
T _j, T _stg
1)_{J-STD20 and JESD22}
2) _{Current is limited by bondwire; with an R thJC=1.3 K/W the chip is able to carry 114 A.}
3) _{See figure 3 for more detailed information}
4) _{See figure 13 for more detailed information}
Value
80
80
320
77
±20
115
-55 ... 175
Unit
A
mJ
V
W
°C
Rev. 2.4
page 1
2010-01-13