IPB038N12N3G_14 Datasheet, PDF (1/11 Pages) Infineon Technologies AG – N-channel, normal level

IPP041N12N3 G
OptiMOS^TM3 Power-Transistor
Features
• N-channel, normal level
• Excellent gate charge x R _DS(on) product (FOM)
• Very low on-resistance R _DS(on)
Product Summary
V_DS
R_{DS(on),max (TO-263)}
I_D
• 175 °C operating temperature
• Pb-free lead plating; RoHS compliant, halogen free
• Qualified according to JEDEC¹⁾ for target application
• Ideal for high-frequency switching and synchronous rectification
IPI041N12N3 G
IPB038N12N3 G
120 V
3.8 mW
120 A
Type
IPB038N12N3 G IPI041N12N3 G
IPP041N12N3 G
Package
Marking
PG-TO263-3
038N12N
PG-TO262-3
041N12N
PG-TO220-3
041N12N
Maximum ratings, at T _j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Value
Continuous drain current
I_D
T _C=25 °C²⁾
T _C=100 °C
Pulsed drain current³⁾
I _D,pulse T _C=25 °C
Avalanche energy, single pulse
E _AS
I _D=100 A, R _GS=25 W
Gate source voltage ⁴⁾
V _GS
Power dissipation
P _tot
T _C=25 °C
Operating and storage temperature T _j, T _stg
IEC climatic category; DIN IEC 68-1
120
120
480
900
±20
300
-55 ... 175
55/175/56
Unit
A
mJ
V
W
°C
Rev. 2.3
page 1
2014-04-15