IPB037N06N3G Datasheet, PDF (1/11 Pages) Infineon Technologies AG – OptiMOS™3 Power-Transistor Features for sync. rectification, drives and dc/dc SMPS

Type
OptiMOS^™3 Power-Transistor
Features
• for sync. rectification, drives and dc/dc SMPS
• Excellent gate charge x R _DS(on) product (FOM)
• Very low on-resistance R _DS(on)
• N-channel, normal level
• Avalanche rated
• Qualified according to JEDEC¹⁾ for target applications
• Pb-free plating; RoHS compliant
• Halogen-free according to IEC61249-2-21
Type
IPB037N06N3 G IPI040N06N3 G
IPB037N06N3 G IPI040N06N3 G
Product Summary
IPP040N06N3 G
V _DS
R _{DS(on),max (SMD)}
I_D
60 V
3.7 mΩ
90 A
previous engineering
sample codes:
IPP04xN06N
IPI04xN06N
IPB04xN06N
IPP040N06N3 G
Package
Marking
PG-TO263-3
037N06N
PG-TO262-3
040N06N
PG-TO220-3
040N06N
Maximum ratings, at T _j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Value
Unit
Continuous drain current
I_D
T _C=25 °C²⁾
90
A
T _C=100 °C
90
Pulsed drain current³⁾
I _D,pulse T _C=25 °C
360
Avalanche energy, single pulse
E _AS
I _D=90 A, R _GS=25 Ω
165
mJ
Gate source voltage
V _GS
±20
V
Power dissipation
P _tot
T _C=25 °C
188
W
Operating and storage temperature T _j, T _stg
-55 ... 175
°C
IEC climatic category; DIN IEC 68-1
55/175/56
1)_{J-STD20 and JESD22}
2) _{Current is limited by bondwire; with an R thJC=0.8 K/W the chip is able to carry 162 A.}
3) _{See figure 3}
4) _{Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm}2 _{(one layer, 70 µm thick) copper area for drain}
connection. PCB is vertical in still air.
Rev. 1.03
page 1
2009-12-17