IPB036N12N3G Datasheet, PDF (1/9 Pages) Infineon Technologies AG – OptiMOS™3 Power-Transistor

IPB036N12N3 G
OptiMOS^™3 Power-Transistor
Features
• Ideal for high frequency switching and DC/DC converters
• Excellent gate charge x R _DS(on) product (FOM)
• Very low on-resistance R_DS(on)
Product Summary
V _DS
R _DS(on),max
I_D
• N-channel, normal level
• 100% avalanche tested
• Pb-free plating; RoHS compliant
• Qualified according to JEDEC¹⁾ for target applications
• Halogen-free according to IEC61249-2-21
120 V
3.6 mΩ
180 A
Type
IPB036N12N3 G
Package
Marking
PG-TO263-7
036N12N
Maximum ratings, at T _j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
I_D
T _C=25 °C²⁾
T _C=100 °C
Pulsed drain current²⁾
I _D,pulse T _C=25 °C
Avalanche energy, single pulse³⁾
E _AS
I _D=100 A, R _GS=25 Ω
Gate source voltage
V _GS
Power dissipation
P _tot
T _C=25 °C
Operating and storage temperature T _j, T _stg
IEC climatic category; DIN IEC 68-1
1)_{J-STD20 and JESD22}
2) _{See figure 3 for more detailed information}
3) _{See figure 13 for more detailed information}
Rev. 2.2
page 1
Value
Unit
180
A
139
720
900
mJ
±20
V
300
W
-55 ... 175
°C
55/175/56
2009-12-17