IPB027N10N5_16 Datasheet, PDF (1/11 Pages) Infineon Technologies AG – OptiMOSª 5 Power-Transistor, 100 V

IPB027N10N5
MOSFET
OptiMOS^ª5Power-Transistor,100V
Features
•Idealforhighfrequencyswitchingandsync.rec.
•ExcellentgatechargexRDS(on)product(FOM)
•Verylowon-resistanceRDS(on)
•N-channel,normallevel
•100%avalanchetested
•Pb-freeplating;RoHScompliant
•QualifiedaccordingtoJEDEC¹⁾fortargetapplications
•Halogen-freeaccordingtoIEC61249-2-21
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS
100
V
RDS(on),max
2.7
mΩ
ID
120
A
Qoss
142
nC
QG(0V..10V)
112
nC
D²PAK
Drain
Pin 2, Tab
Gate
Pin 1
Source
Pin 3
Type/OrderingCode
IPB027N10N5
Package
PG-TO 263
Marking
027N10N5
RelatedLinks
-
1) _{J-STD20 and JESD22}
Final Data Sheet
1
Rev.2.2,2016-07-20