IPB025N08N3G_16 Datasheet, PDF (1/10 Pages) Infineon Technologies AG – OptiMOSª3 Power-Transistor, 80 V

IPB025N08N3G
MOSFET
OptiMOS^ª3Power-Transistor,80V
Features
•N-channel,normallevel
•ExcellentgatechargexRDS(on)product(FOM)
•Verylowon-resistanceRDS(on)
•175°Coperatingtemperature
•Pb-freeleadplating;RoHScompliant
•QualifiedaccordingtoJEDEC¹⁾fortargetapplication
•Idealforhigh-frequencyswitchingandsynchronousrectification
•Halogen-freeaccordingtoIEC61249-2-21
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS
80
V
RDS(on),max
2.5
mΩ
ID
120
A
D²PAK
Drain
Pin 2, Tab
Gate
Pin 1
Source
Pin 3
Type/OrderingCode
IPB025N08N3 G
Package
PG-TO 263
Marking
025N08N
RelatedLinks
-
1) _{J-STD20 and JESD22}
Final Data Sheet
1
2016-03-31