IPB022N04LG Datasheet, PDF (1/10 Pages) Infineon Technologies AG – OptiMOS3 Power-Transistor

Type
!"#$%!&^™3 Power-Transistor
Features
• Fast switching MOSFET for SMPS
• Optimized technology for DC/DC converters
• Qualified according to JEDEC¹⁾ for target applications
• N-channel, logic level
• Excellent gate charge x R _DS(on) product (FOM)
• Very low on-resistance R _DS(on)
• 100% Avalanche tested
• Pb-free plating; RoHS compliant
• Halogen-free according to IEC61249-2-21
Type
IPB022N04L G
Product Summary
V _DS
R _DS(on),max
I_D
IPB022N04L G
40 V
2.2 mW
90 A
Package
Marking
PG-TO263-3
022N04L
Maximum ratings, at T _j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
Pulsed drain current²⁾
Avalanche current, single pulse³⁾
Avalanche energy, single pulse
Gate source voltage
1) _{J-STD20 and JESD22}
I_D
V _GS=10 V, T _C=25 °C
V _GS=10 V, T _C=100 °C
V _GS=4.5 V, T _C=25 °C
V _GS=4.5 V,
T _C=100 °C
I _D,pulse
I _AS
E _AS
V _GS
T _C=25 °C
T _C=25 °C
I _D=90 A, R _GS=25 W
Rev. 1.2
page 1
Value
90
90
90
90
400
90
150
±20
Unit
A
mJ
V
2009-12-11