IPB021N06N3G Datasheet, PDF (1/11 Pages) Infineon Technologies AG – OptiMOS™3 Power-Transistor Features Ideal for high frequency switching and sync. rec.

Type
OptiMOS^™3 Power-Transistor
Features
• Ideal for high frequency switching and sync. rec.
• Optimized technology for DC/DC converters
• Excellent gate charge x R _DS(on) product (FOM)
• Very low on-resistance R_DS(on)
• N-channel, normal level
• 100% avalanche tested
• Pb-free plating; RoHS compliant
• Qualified according to JEDEC¹⁾ for target applications
• Halogen-free according to IEC61249-2-21
Type
IPB021N06N3 G IPI024N06N3 G
IPB021N06N3 G IPI024N06N3 G
IPP024N06N3 G
Product Summary
V _DS
R _{DS(on),max (SMD)}
I_D
60 V
2.1 mΩ
120 A
IPP024N06N3 G
Package
Marking
PG-TO263-3
021N06N
PG-TO262-3
024N06N
PG-TO220-3
024N06N
Maximum ratings, at T _j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Value
Continuous drain current
I_D
T _C=25 °C²⁾
T _C=100 °C
Pulsed drain current³⁾
I _D,pulse T _C=25 °C
Avalanche energy, single pulse⁴⁾
E _AS
I _D=100 A, R _GS=25 Ω
Gate source voltage
V _GS
Power dissipation
P _tot
T _C=25 °C
Operating and storage temperature T _j, T _stg
IEC climatic category; DIN IEC 68-1
1)_{J-STD20 and JESD22}
2) _{Current is limited by bondwire; with an R thJC=0.6 K/W the chip is able to carry 256A.}
3) _{See figure 3 for more detailed information}
4) _{See figure 13 for more detailed information}
120
120
480
634
±20
250
-55 ... 175
55/175/56
Rev. 2.2
page 1
Unit
A
mJ
V
W
°C
2009-12-11