IPB010N06N_16 Datasheet, PDF (1/11 Pages) Infineon Technologies AG – OptiMOSTM Power-Transistor, 60 V

IPB010N06N
MOSFET
OptiMOS^TMPower-Transistor,60V
Features
•Optimizedforsynchronousrectification
•100%avalanchetested
•Superiorthermalresistance
•N-channel,normallevel
•QualifiedaccordingtoJEDEC¹⁾fortargetapplications
•Pb-freeleadplating;RoHScompliant
•Halogen-freeaccordingtoIEC61249-2-21
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS
60
V
RDS(on),max
1.0
mΩ
ID
180
A
Qoss
228
nC
QG(0V..10V)
208
nC
D²-PAK7pin
tab
1
7
Drain
Pin 4, tab
Gate
Pin 1
Source
Pin 2,3,5,6,7
Type/OrderingCode
IPB010N06N
Package
PG-TO263-7
Marking
010N06N
RelatedLinks
-
1) _{J-STD20 and JESD22}
Final Data Sheet
1
Rev.2.4,2016-01-18