IPB009N03LG_16 Datasheet, PDF (1/11 Pages) Infineon Technologies AG – OptiMOSª3 Power-Transistor, 30 V

IPB009N03LG
MOSFET
OptiMOS^ª3Power-Transistor,30V
Features
•MOSFETforORingandUninterruptiblePowerSupply
•QualifiedaccordingtoJEDEC¹⁾fortargetapplications
•N-channel
•Logiclevel
•Ultra-lowon-resistanceRDS(on)
•100%Avalanchetested
•Pb-freeplating;RoHScompliant
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS
30
V
RDS(on),max
0.95
mΩ
ID
180
A
D²-PAK7pin
tab
1
7
Drain
Pin 4, tab
Gate
Pin 1
Source
Pin 2,3,5,6,7
Type/OrderingCode
IPB009N03L G
Package
PG-TO263-7
Marking
009N03L
RelatedLinks
-
1) _{J-STD20 and JESD22}
Final Data Sheet
1
Rev.2.0,2016-04-21