IPA60R800CE_16 Datasheet, PDF (1/16 Pages) Infineon Technologies AG – 600V CoolMOSª CE Power Transistor

IPD60R800CE,IPA60R800CE
MOSFET
600VCoolMOSªCEPowerTransistor
CoolMOS™isarevolutionarytechnologyforhighvoltagepower
MOSFETs,designedaccordingtothesuperjunction(SJ)principleand
pioneeredbyInfineonTechnologies.CoolMOS™CEisa
price-performanceoptimizedplatformenablingtotargetcostsensitive
applicationsinConsumerandLightingmarketsbystillmeetinghighest
efficiencystandards.Thenewseriesprovidesallbenefitsofafast
switchingSuperjunctionMOSFETwhilenotsacrificingeaseofuseand
offeringthebestcostdownperformanceratioavailableonthemarket.
DPAK
tab
PG-TO220FP
2
1
3
Drain
Pin 2, Tab
Features
•ExtremelylowlossesduetoverylowFOMRdson*QgandEoss
•Veryhighcommutationruggedness
•Easytouse/drive
•Pb-freeplating,Halogenfreemoldcompound
•Qualifiedforstandardgradeapplications
Gate
Pin 1
Source
Pin 3
Applications
PFCstages,hardswitchingPWMstagesandresonantswitchingstages
fore.g.PCSilverbox,Adapter,LCD&PDPTVandindoorlighting.
Pleasenote:Note1:ForMOSFETparallelingtheuseofferritebeadson
thegateorseparatetotempolesisgenerallyrecommended.
Note2:*6R800CEisFullPAKmarkingonly
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS @ Tj,max
650
V
RDS(on),max
800
mΩ
Id.
8.4
A
Qg.typ
17.2
nC
ID,pulse
15.7
A
Eoss@400V
1.6
µJ
Type/OrderingCode
IPD60R800CE
IPA60R800CE
Package
PG-TO 252
PG-TO 220 FullPAK
Marking
RelatedLinks
60S800CE / 6R800CE*
see Appendix A
Final Data Sheet
1
Rev.2.3,2016-08-08