IPA60R650CE_16 Datasheet, PDF (1/16 Pages) Infineon Technologies AG – 600V CoolMOSª CE Power Transistor

IPD60R650CE,IPA60R650CE
MOSFET
600VCoolMOSªCEPowerTransistor
CoolMOS™isarevolutionarytechnologyforhighvoltagepower
MOSFETs,designedaccordingtothesuperjunction(SJ)principleand
pioneeredbyInfineonTechnologies.CoolMOS™CEisa
price-performanceoptimizedplatformenablingtotargetcostsensitive
applicationsinConsumerandLightingmarketsbystillmeetinghighest
efficiencystandards.Thenewseriesprovidesallbenefitsofafast
switchingSuperjunctionMOSFETwhilenotsacrificingeaseofuseand
offeringthebestcostdownperformanceratioavailableonthemarket.
DPAK
tab
PG-TO220FP
2
1
3
Drain
Pin 2, Tab
Features
•ExtremelylowlossesduetoverylowFOMRdson*QgandEoss
•Veryhighcommutationruggedness
•Easytouse/drive
•Pb-freeplating,Halogenfreemoldcompound
•Qualifiedforstandardgradeapplications
Gate
Pin 1
Source
Pin 3
Applications
PFCstages,hardswitchingPWMstagesandresonantswitchingstages
fore.g.PCSilverbox,Adapter,LCD&PDPTVandindoorlighting.
Pleasenote:Note1:ForMOSFETparallelingtheuseofferritebeadson
thegateorseparatetotempolesisgenerallyrecommended.
Note2:*6R650CEisFullPAKmarkingonly
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS @ Tj,max
650
V
RDS(on),max
650
mΩ
Id.
9.9
A
Qg.typ
20.5
nC
ID,pulse
19
A
Eoss@400V
1.9
µJ
Type/OrderingCode
IPD60R650CE
IPA60R650CE
Package
PG-TO 252
PG-TO 220 FullPAK
Marking
RelatedLinks
60S650CE / 6R650CE*
see Appendix A
Final Data Sheet
1
Rev.2.2,2016-08-08