IPA60R385CP_10 Datasheet, PDF (1/10 Pages) Infineon Technologies AG – CoolMos Power Transistor

IPA60R385CP
CoolMOS^® Power Transistor
Features
V)DL: HI;><JG: D; B : G>I/ _HG M . _@
V2 AIG6 ADL <6I: 8=6G<:
V" MIG: B : 9K9IG6I: 9
Product Summary
V _=L  1_[%^Ri
R _{=L"`_#%^Ri}@T _[   Y
Q _X%eja
/.) O
)',1. "
*0 _<
V% ><= E: 6@8JGG: CI86E67>A>IN
V. J6A>;>: 9 for industrial grade applications 688DG9>C< ID ' " !" ^*#
V- 7 ;G: : A: 69 EA6I>C< / D% 0 8DB EA>6CI; Halogen free mold compound
I@&MH++)
CoolMOS is specially designed for:
V% 6G9 HL>I8=>C< 0 * - 0 IDEDAD<>: H
Type
BI9/)K,1.<I
Package
I@&MH++)
Ordering Code Marking
LI))))12,*/ /K,1.I
Maximum ratings, 6IT _[   Y JCA: HHDI=: GL>H: HE: 8>;>: 9
Parameter
Symbol Conditions
DCI>CJDJH9G6>C 8JGG: CI^+#
- JAH: 9 9G6>C 8JGG: CI^,#
 K6A6C8=: : C: G<N H>C<A: EJAH:

K6A6C8=:
: C: G<N G: E: I>I>K:
t
,#-#
9K

K6A6C8=:
8JGG: CI G: E: I>I>K:
t
,#%-#
9K
* , 0 # " 1 9v (Ut GJ<<: 9C: HH
$ 6I: HDJG8: KDAI6<:
I₌
I _=%af]dV
E _9L
E _9K
I _9K
9v (Ut
V _@L
T _<   Y
T _<  Y
T _<   Y
I ₌    V ₌₌  3
I ₌    V ₌₌  3
V _=L   3
deReZT
 f   % O
- DL: G9>HH>E6I>DC
, E: G6I>C< 6C9 HIDG6<: I: B E: G6IJG:
P _e`e
T _<   Y
T _[ T _deX
* DJCI>C< IDGFJ:
*   H8G: LH
/ : K  
E6<: 
Value
2')
.'0
+0
++0
)',
,
.)
v+)
v,)
,*
    

Unit
9
^C
9
O(_d
O
P
u<
+ 8B