IPA60R385CP Datasheet, PDF (1/10 Pages) Infineon Technologies AG – CoolMOS Power Transistor

CoolMOS^TM Power Transistor
Features
• Lowest figure-of-merit R_ON x Q_G
• Ultra low gate charge
• Extreme dv/dt rated
• High peak current capability
• Qualified according to JEDEC¹⁾ for target applications
• Pb-free lead plating; RoHS compliant
Product Summary
V _DS @ T_j,max
R _DS(on),max
Q _g,typ
IPA60R385CP
650 V
0.385 Ω
17 nC
PG-TO220-3-31
CoolMOS is specially designed for:
• Hard switching SMPS topologies
Type
IPA60R385CP
Package
Ordering Code
PG-TO220-3-31 SP000089316
Marking
6R385P
Maximum ratings, at T _j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current²⁾
I_D
T _C=25 °C
Pulsed drain current³⁾
I _D,pulse
T _C=100 °C
T _C=25 °C
Avalanche energy, single pulse
Avalanche
energy,
repetitive
t
3)4)
AR
Avalanche
current,
repetitive
t
3),4)
AR
MOSFET dv /dt ruggedness
E _AS
E _AR
I _AR
dv /dt
Gate source voltage
V _GS
I _D=3.4 A, V _DD=50 V
I _D=3.4 A, V _DD=50 V
V _DS=0...480 V
static
AC (f >1 Hz)
Power dissipation
P _tot
T _C=25 °C
Operating and storage temperature T _j, T _stg
Mounting torque
M2.5 screws
Rev. 1.5
page 1
Value
9.0
5.7
27
227
0.3
3
50
±20
±30
31
-55 ... 150
50
Unit
A
mJ
A
V/ns
V
W
°C
Ncm
2006-01-04