IPA060N06N_16 Datasheet, PDF (1/10 Pages) Infineon Technologies AG – OptiMOSTM Power-Transistor, 60 V

IPA060N06N
MOSFET
OptiMOS^TMPower-Transistor,60V
Features
•OptimizedforhighperformanceSMPS,e.g.sync.rec.
•100%avalanchetested
•Superiorthermalresistance
•N-channel
•QualifiedaccordingtoJEDEC¹⁾fortargetapplications
•Pb-freeleadplating;RoHScompliant
•Halogen-freeaccordingtoIEC61249-2-21
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS
60
V
RDS(on),max
6.0
mΩ
ID
45
A
QOSS
32
nC
QG(0V..10V)
27
nC
TO-220-FP
Gate
Pin 1
Drain
Pin 2
Source
Pin 3
Type/OrderingCode
IPA060N06N
Package
PG-TO220-FP
Marking
060N06N
RelatedLinks
-
1) _{J-STD20 and JESD22}
Final Data Sheet
1
Rev.2.2,2016-08-10