IPA045N10N3G_16 Datasheet, PDF (1/10 Pages) Infineon Technologies AG – OptiMOSTM3 Power-Transistor, 100 V

IPA045N10N3G
MOSFET
OptiMOS^TM3Power-Transistor,100V
Features
•N-channel,normallevel
•ExcellentgatechargexRDS(on)product(FOM)
•Verylowon-resistanceRDS(on)
•175°Coperatingtemperature
•Pb-freeleadplating;RoHScompliant
•QualifiedaccordingtoJEDEC¹⁾fortargetapplication
•Idealforhigh-frequencyswitchingandsynchronousrectification
•Halogen-freeaccordingtoIEC61249-2-21
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS
100
V
RDS(on),max
4.5
mΩ
ID
64
A
TO-220-FP
Gate
Pin 1
Drain
Pin 2
Source
Pin 3
Type/OrderingCode
IPA045N10N3 G
Package
PG-TO220-FP
Marking
045N10N
RelatedLinks
-
1) _{J-STD20 and JESD22}
Final Data Sheet
1
Rev.2.4,2016-01-22