IPA037N08N3G_13 Datasheet, PDF (1/9 Pages) Infineon Technologies AG – OptiMOS(TM)3 Power-Transistor

OptiMOS^(TM)3 Power-Transistor
Features
• Ideal for high frequency switching and sync. rec.
• Optimized technology for DC/DC converters
• Excellent gate charge x R _DS(on) product (FOM)
• Very low on-resistance R_DS(on)
• N-channel, normal level
• 100% avalanche tested
• Pb-free plating; RoHS compliant
• Qualified according to JEDEC¹⁾ for target applications
• Halogen-free according to IEC61249-2-21
Type
IPA037N08N3 G
Product Summary
V_DS
R_DS(on),max
I_D
IPA037N08N3 G
80 V
3.7 mW
75 A
Package
Marking
PG-TO220-FP
037N08N
Maximum ratings, at T _j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Value
Continuous drain current
I_D
T _C=25 °C²⁾
75
T _C=100 °C
54
Pulsed drain current³⁾
I _D,pulse T _C=25 °C
300
Avalanche energy, single pulse⁴⁾
E _AS
I _D=75 A, R _GS=25 W
680
Gate source voltage
V _GS
±20
Power dissipation
P _tot
T _C=25 °C
41
Operating and storage temperature T _j, T _stg
-55 ... 175
IEC climatic category; DIN IEC 68-1
55/175/56
1)_{J-STD20 and JESD22}
2) _{Current is limited by package; with an RthJC=0.7 K/W in a standard TO-220 package the chip is able}
to carry 178A.
3) _{See figure 3 for more detailed information}
4) _{See figure 13 for more detailed information}
Unit
A
mJ
V
W
°C
Rev. 2.1
page 1
2013-08-27