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IPA028N08N3G_13 Datasheet, PDF (1/9 Pages) Infineon Technologies AG – OptiMOS(TM)3 Power-Transistor | |||
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OptiMOS(TM)3 Power-Transistor
Features
⢠Ideal for high frequency switching and sync. rec.
⢠Optimized technology for DC/DC converters
⢠Excellent gate charge x R DS(on) product (FOM)
⢠Very low on-resistance RDS(on)
⢠N-channel, normal level
⢠100% avalanche tested
⢠Pb-free plating; RoHS compliant
⢠Qualified according to JEDEC1) for target applications
⢠Halogen-free according to IEC61249-2-21
Type
IPA028N08N3 G
IPA028N08N3 G
Product Summary
VDS
RDS(on),max
ID
80 V
2.8 mW
89 A
Package
PG-TO-220-FP
Marking
028N08N
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Value
Continuous drain current
ID
T C=25 °C2)
89
T C=100 °C
62
Pulsed drain current3)
I D,pulse T C=25 °C
352
Avalanche energy, single pulse4)
E AS
I D=89 A, R GS=25 W
1430
Gate source voltage
V GS
±20
Power dissipation
P tot
T C=25 °C
42
Operating and storage temperature T j, T stg
-55 ... 175
IEC climatic category; DIN IEC 68-1
55/175/56
1)J-STD20 and JESD22
2) Current is limited by package; with an RthJC=0.5K/W in a standard TO-220 package the chip is able
to carry 251A.
3) See figure 3 for more detailed information
4) See figure 13 for more detailed information
Unit
A
mJ
V
W
°C
Rev. 2.1
page 1
2013-08-26
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