IPA028N08N3G Datasheet, PDF (1/9 Pages) Infineon Technologies AG – OptiMOS(TM)3 Power-Transistor

OptiMOS^(TM)3 Power-Transistor
Features
• Ideal for high frequency switching and sync. rec.
• Optimized technology for DC/DC converters
• Excellent gate charge x R _DS(on) product (FOM)
• Very low on-resistance R_DS(on)
• N-channel, normal level
• 100% avalanche tested
• Pb-free plating; RoHS compliant
• Qualified according to JEDEC¹⁾ for target applications
Type
IPA028N08N3 G
IPA028N08N3 G
Product Summary
V _DS
R _DS(on),max
I_D
80 V
2.8 mΩ
89 A
Package
Marking
PG-TO-220-FP
028N08N
Maximum ratings, at T _j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Value
Continuous drain current
I_D
T _C=25 °C²⁾
89
T _C=100 °C
62
Pulsed drain current³⁾
I _D,pulse T _C=25 °C
352
Avalanche energy, single pulse⁴⁾
E _AS
I _D=89 A, R _GS=25 Ω
1430
Gate source voltage
V _GS
±20
Power dissipation
P _tot
T _C=25 °C
42
Operating and storage temperature T _j, T _stg
-55 ... 175
IEC climatic category; DIN IEC 68-1
55/175/56
1)_{J-STD20 and JESD22}
2) _{Current is limited by package; with an RthJC=0.5K/W in a standard TO-220 package the chip is able}
to carry 251A.
3) _{See figure 3 for more detailed information}
4) _{See figure 13 for more detailed information}
Unit
A
mJ
V
W
°C
Rev. 2.0
page 1
2009-02-23