ILD03N60 Datasheet, PDF (1/15 Pages) Infineon Technologies AG – LightMOS Power Transistor

ILA03N60, ILP03N60
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ILB03N60, ILD03N60
LightMOS Power Transistor
• New high voltage technology designed for ZVS-switching in lamp
ballasts
• IGBT with integrated reverse diode
• 4A current rating for reverse diode
• Up to 10 times lower gate capacitance than MOSFET
• Avalanche rated
• 150°C operating temperature
• FullPak isolates 2.5 kV AC (1 min.)
P-TO-220-3-1
(TO-220AB)
C
G
P-TO-220-3-31
E
(TO-220 FullPak)
P-TO-263-3-2 (D²-PAK)
(TO-263AB)
P-TO-252-3-1 (D-PAK)
(TO-252AA)
Type
V_CE
ILA03N60
600V
ILP03N60
600V
ILB03N60
600V
ILD03N60
600V
Maximum Ratings
I_C
3.0A
3.0A
3.0A
3.0A
V_{CE(sat),Tj=25°C}
2.9V
2.9V
2.9V
2.9V
Parameter
Collector-emitter voltage
DC collector current
T_C = 25°C
T_C = 100°C
Pulsed collector current, t_p limited by T_jmax, t_p < 10 ms
Pulsed collector current, t_p limited by T_jmax
Diode forward current
T_C = 25°C
T_C = 100°C
Diode pulsed current, t_p limited by T_jmax, t_p < 10 ms
Diode pulsed current, t_p limited by T_jmax
Avalanche energy, single pulse
I_C=0.4A, V_CE=50V
Gate-emitter voltage
Reverse diode dv/dt
I_C ≤ 3A, V_CE ≤ 450V, T_jmax ≤ 150°C
Power dissipation (T_C = 25°C)
Operating junction and storage temperature
Soldering temperature
for 10 s (according to JEDEC J-STA-020A)
T_j,max
150°C
150°C
150°C
150°C
Package
Ordering Code
P-TO-220-3-31 Q67040-S4626
P-TO-220-3-1 Q67040-S4628
P-TO-263-3-2 Q67040-S4627
P-TO-252-3-1 Q67040-S4625
Symbol
V_CE
I_C
I_Cpuls
I_F
I_Fpuls
E_AS
Value
ILA03N60 Others
600
3
4.5
2.2
3
9
5.5
4
4
2.2
2.5
9
5.5
0.32
Unit
V
A
mJ
V_GE
dv/dt
±30
V
1¹
V/ns
P_tot
16.5
27
W
T_stg
-55...+150
°C
T_s
D-Pak 255
Others 220
1 _{Reverse diode of transistor is commutated with same device according to figure C. With application}
relevant values I_C ≤ 1.5A, C_Snubber = 1 nF and R_G ≥ 50Ω, dv/dt of the reverse diode is within its specification.
Power Semiconductors
1
Rev. 1.2 Apr-04