IKW75N60T_08 Datasheet, PDF (1/13 Pages) Infineon Technologies AG – Low Loss DuoPack : IGBT in TrenchStop and Fieldstop technology

TrenchStop^® Series
IKW75N60T
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Low Loss DuoPack : IGBT in TrenchStop^® and Fieldstop technology
with soft, fast recovery anti-parallel EmCon HE diode
C
• Very low V_CE(sat) 1.5 V (typ.)
• Maximum Junction Temperature 175 °C
• Short circuit withstand time – 5µs
• Positive temperature coefficient in V_CE(sat)
• very tight parameter distribution
• high ruggedness, temperature stable behaviour
• very high switching speed
• Low EMI
• Very soft, fast recovery anti-parallel EmCon HE diode
• Qualified according to JEDEC¹⁾ for target applications
• Pb-free lead plating; RoHS compliant
• Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
G
E
PG-TO-247-3
Applications:
• Frequency Converters
• Uninterrupted Power Supply
Type
V_CE
I_C
V_{CE(sat),Tj=25°C} T_j,max
Marking
Package
IKW75N60T 600V 75A
1.5V
175°C K75T60 PG-TO-247-3
Maximum Ratings
Parameter
Symbol
Value
Collector-emitter voltage
DC collector current, limited by T_jmax
T_C = 25°C
T_C = 100°C
Pulsed collector current, t_p limited by T_jmax
Turn off safe operating area (V_CE ≤ 600V, T_j ≤ 175°C)
Diode forward current, limited by T_jmax
T_C = 25°C
T_C = 100°C
Diode pulsed current, t_p limited by T_jmax
Gate-emitter voltage
Short circuit withstand time³⁾
V_GE = 15V, V_CC ≤ 400V, T_j ≤ 150°C
Power dissipation T_C = 25°C
Operating junction temperature
Storage temperature
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
V_CE
I_C
I_Cpuls
-
I_F
I_Fpuls
V_GE
t_SC
P_tot
T_j
T_stg
-
600
80²⁾
75
225
225
80²⁾
75
225
±20
5
428
-40...+175
-55...+175
260
Unit
V
A
V
µs
W
°C
1) _{J-STD-020 and JESD-022}
2) _{Value limited by bondwire}
3) _{Allowed number of short circuits: <1000; time between short circuits: >1s.}
Power Semiconductors
1
Rev. 2.6 Sep 08