IKW75N60TA Datasheet, PDF (1/13 Pages) Infineon Technologies AG – Designed for DC/AC converters for Automotive Application

IKW75N60TA
TRENCHSTOP^TM Series
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Low Loss DuoPack : IGBT in TRENCHSTOP^TM and Fieldstop technology with soft,
fast recovery anti-parallel Emitter Controlled HE diode
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 Automotive AEC Q101 qualified
 Designed for DC/AC converters for Automotive Application
 Very low VCE(sat) 1.5V (typ.)
 Maximum Junction Temperature 175°C
 Short circuit withstand time 5s
 TRENCHSTOP^TM and Fieldstop technology for 600V applications offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
- very high switching speed
 Positive temperature coefficient in VCE(sat)
 Low EMI
 Low Gate Charge
 Green Package
 Very soft, fast recovery anti-parallel Emitter Controlled HE diode
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E
PG-TO247-3
Type
IKW75N60TA
V_CE
600V
I_C
75A
V_{CE(sat),Tj=25°C}
1.5V
T_j,max
175C
Marking
K75T60A
Package
PG-TO247-3
Maximum Ratings
Parameter
Collector-emitter voltage, T_j ≥ 25C
DC collector current, limited by T_jmax
Pulsed collector current, t_p limited by T_jmax
T_C = 25C
T_C = 105C
Turn off safe operating area, V_CE  600V, T_j  175C, t_p  1µs
Diode forward current, limited by T_jmax
T_C = 25C
Diode pulsed current, t_p limited by T_jmax
Gate-emitter voltage
Short circuit withstand time²⁾
V_GE = 15V, V_CC  400V, T_j  150C
T_C = 100C
Power dissipation T_C = 25C
Operating junction temperature
Storage temperature
Soldering temperature (wavesoldering only allowed at leads,
1.6mm (0.063 in.) from case for 10s)
Symbol
V_CE
I_C
I_Cpuls
-
I_F
I_Fpuls
V_GE
t_SC
P_tot
T_j
T_stg
T_sold
Value
600
80¹⁾
75
225
225
80¹⁾
75
225
20
5
428
-40...+175
-55...+150
260
Unit
V
A
V
s
W
C
1) _{Value limited by bondwire}
2) _{Allowed number of short circuits: <1000; time between short circuits: >1s.}
Power Semiconductors
1
Rev. 2.3 14.07.2014