IKW40T120_13 Datasheet, PDF (1/16 Pages) Infineon Technologies AG – IGBT in TrenchStop and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode

TrenchStop^® Series
IKW40T120
Low Loss DuoPack : IGBT in TrenchStop^® and Fieldstop technology with soft,
fast recovery anti-parallel Emitter Controlled HE diode
C
 Best in class TO247
 Short circuit withstand time – 10s
 Designed for :
- Frequency Converters
G
E
- Uninterrupted Power Supply
 TrenchStop^® and Fieldstop technology for 1200 V applications
offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
PG-TO-247-3
 NPT technology offers easy parallel switching capability due to
positive temperature coefficient in V_CE(sat)
 Low EMI
 Low Gate Charge
 Very soft, fast recovery anti-parallel Emitter Controlled HE diode
 Qualified according to JEDEC¹ for target applications
 Pb-free lead plating; RoHS compliant
 Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
Type
V_CE
I_C V_{CE(sat),Tj=25°C} T_j,max Marking Code
IKW40T120 1200V 40A
1.7V
150C K40T120
Maximum Ratings
Parameter
Symbol
Collector-emitter voltage
DC collector current
T_C = 25C
T_C = 100C
Pulsed collector current, t_p limited by T_jmax
Turn off safe operating area
V_CE  1200V, T_j  150C
Diode forward current
T_C = 25C
T_C = 100C
Diode pulsed current, t_p limited by T_jmax
Gate-emitter voltage
Short circuit withstand time²⁾
V_GE = 15V, V_CC  1200V, T_j  150C
Power dissipation
T_C = 25C
Operating junction temperature
Storage temperature
V_CE
I_C
I_Cpuls
-
I_F
I_Fpuls
V_GE
t_SC
P_tot
T_j
T_stg
Package
PG-TO-247-3
Value
1200
75
40
105
105
80
40
105
20
10
270
-40...+150
-55...+150
Unit
V
A
V
s
W
C
1 _{J-STD-020 and JESD-022}
2) _{Allowed number of short circuits: <1000; time between short circuits: >1s.}
IFAG IPV TD VLS
1
Rev. 2.3 12.03.2013