IKW25N120T2_13 Datasheet, PDF (1/15 Pages) Infineon Technologies AG – IGBT in 2nd generation TrenchStop with soft, fast recovery anti-parallel Emitter Controlled Diode

IKW25N120T2
TrenchStop^® 2^nd generation Series
Low Loss DuoPack : IGBT in 2^nd generation TrenchStop^®
with soft, fast recovery anti-parallel Emitter Controlled Diode
C
 Short circuit withstand time – 10s
 Designed for :
- Frequency Converters
- Uninterrupted Power Supply
 TrenchStop^® 2^nd generation for 1200 V applications offers :
G
E
- very tight parameter distribution
- high ruggedness, temperature stable behavior
 Easy paralleling capability due to positive temperature coefficient
in V_CE(sat)
 Low EMI
PG-TO-247-3
 Low Gate Charge
 Very soft, fast recovery anti-parallel Emitter Controlled HE Diode
 Qualified according to JEDEC¹ for target applications
 Pb-free lead plating; RoHS compliant
Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
Type
V_CE
I_C V_{CE(sat),Tj=25°C} T_j,max Marking Code
IKW25N120T2 1200V 25A
1.7V
175C K25T1202
Maximum Ratings
Parameter
Symbol
Collector-emitter voltage
DC collector current (T_j=150°C)
T_C = 25C
T_C = 110C
Pulsed collector current, t_p limited by T_jmax
Turn off safe operating area
V_CE  1200V, T_j  175C
Diode forward current (T_j=150°C)
T_C = 25C
T_C = 110C
Diode pulsed current, t_p limited by T_jmax
Gate-emitter voltage
Short circuit withstand time²⁾
V_GE = 15V, V_CC  600V, T_{j, start}  175C
Power dissipation
T_C = 25C
Operating junction temperature
Storage temperature
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
Wavesoldering only, temperature on leads only
V_CE
I_C
I_Cpuls
-
I_F
I_Fpuls
V_GE
t_SC
P_tot
T_j
T_stg
-
Package
PG-TO-247-3
Value
1200
50
25
100
100
40
25
100
20
10
349
-40...+175
-55...+150
260
Unit
V
A
V
s
W
C
1 _{J-STD-020 and JESD-022}
2) _{Allowed number of short circuits: <1000; time between short circuits: >1s.}
IFAG IPC TD VLS
1
Rev. 2.2 12.06.2013