IKW08T120 Datasheet, PDF (1/15 Pages) Infineon Technologies AG – LOW LOSS DUOPACK - IGBT IN TRENCH AND FIELDSTOP TECHNOLOGY WITH SOFT, FAST RECOVERY ANTI - PARALLEL EMCON HE DIODE

IKW08T120
^
TrenchStop Series
Low Loss DuoPack : IGBT in Trench and Fieldstop technology
with soft, fast recovery anti-parallel EmCon HE diode
C
• Approx. 1.0V reduced V_CE(sat)
and 0.5V reduced V_F compared to BUP305D
• Short circuit withstand time – 10µs
• Designed for :
G
E
- Frequency Converters
- Uninterrupted Power Supply
• Trench and Fieldstop technology for 1200 V applications offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
• NPT technology offers easy parallel switching capability due to
positive temperature coefficient in V_CE(sat)
• Low EMI
• Low Gate Charge
• Very soft, fast recovery anti-parallel EmCon HE diode
• Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
P-TO-247-3-1
(TO-247AC)
Type
V_CE
I_C
V_{CE(sat),Tj=25°C}
IKW08T120
1200V
8A
1.7V
Maximum Ratings
Parameter
Collector-emitter voltage
DC collector current
T_C = 25°C
T_C = 100°C
Pulsed collector current, t_p limited by T_jmax
Turn off safe operating area
V_CE ≤ 1200V, T_j ≤ 150°C
Diode forward current
T_C = 25°C
T_C = 100°C
Diode pulsed current, t_p limited by T_jmax
Gate-emitter voltage
Short circuit withstand time¹⁾
V_GE = 15V, V_CC ≤ 1200V, T_j ≤ 150°C
Power dissipation
T_C = 25°C
Operating junction temperature
Storage temperature
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
T_j,max
150°C
Package
TO-247AC
Ordering Code
Q67040-S4514
Symbol
V_CE
I_C
I_Cpuls
-
I_F
I_Fpuls
V_GE
t_SC
P_tot
T_j
T_stg
-
Value
Unit
1200
V
A
16
8
24
24
16
8
24
±20
V
10
µs
70
W
-40...+150
°C
-55...+150
260
1) _{Allowed number of short circuits: <1000; time between short circuits: >1s.}
Power Semiconductors
1
Rev. 1 Oct-03