IKP10N60T Datasheet, PDF (1/14 Pages) Infineon Technologies AG – Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode

TrenchStop Series
IKP10N60T
IKB10N60T
Low Loss DuoPack : IGBT in Trench and Fieldstop technology
with soft, fast recovery anti-parallel EmCon HE diode
C
• Very low V_CE(sat) 1.5 V (typ.)
• Maximum Junction Temperature 175 °C
• Short circuit withstand time – 5µs
• Designed for :
G
E
- Variable Speed Drive for washing machines, air
conditioners and induction cooking
- Uninterrupted Power Supply
• Trench and Fieldstop technology for 600 V applications offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
- very high switching speed
- low V_CE(sat)
P-TO-220-3-1
(TO-220AB)
• NPT technology offers easy parallel switching capability due to
positive temperature coefficient in V_CE(sat)
• Low EMI
• Low Gate Charge
• Very soft, fast recovery anti-parallel EmCon HE diode
• Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
P-TO-263-3-2 (D²-PAK)
(TO-263AB)
Type
V_CE
I_C
V_{CE(sat),Tj=25°C}
T_j,max
IKP10N60T 600V 10A
1.5V
175°C
IKB10N60T 600V 10A
1.5V
175°C
Maximum Ratings
Parameter
Collector-emitter voltage
DC collector current, limited by T_jmax
T_C = 25°C
T_C = 100°C
Pulsed collector current, t_p limited by T_jmax
Turn off safe operating area V_CE ≤ 600V, T_j ≤ 175°C
Diode forward current, limited by T_jmax
T_C = 25°C
T_C = 100°C
Diode pulsed current, t_p limited by T_jmax
Gate-emitter voltage
Short circuit withstand time¹⁾
V_GE = 15V, V_CC ≤ 400V, T_j ≤ 150°C
Power dissipation T_C = 25°C
Operating junction temperature
Storage temperature
Marking Code Package
K10T60
TO-220
K10T60
TO-263
Ordering Code
Q67040S4682
Q67040S4681
Symbol
V_CE
I_C
I_Cpuls
-
I_F
I_Fpuls
V_GE
t_SC
P_tot
T_j
T_stg
Value
Unit
600
V
A
20
10
30
30
20
10
30
±20
V
5
µs
110
W
-40...+175
°C
-55...+175
1) _{Allowed number of short circuits: <1000; time between short circuits: >1s.}
Power Semiconductors
1
Rev. 2 Oct-04