IKP06N60T_14 Datasheet, PDF (1/13 Pages) Infineon Technologies AG – IGBT in TRENCHSTOP and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode

TRENCHSTOP™ Series
IKP06N60T
p
Low Loss DuoPack : IGBT in TRENCHSTOP™ and Fieldstop technology with soft,
fast recovery anti-parallel Emitter Controlled HE diode
Features
 Very low VCE(sat) 1.5V (typ.)
 Maximum Junction Temperature 175°C
 Short circuit withstand time 5s
 Designed for :
- Variable Speed Drive for washing machines, air conditioners and induction
cooking
- Uninterrupted Power Supply
 TRENCHSTOP™ and Fieldstop technology for 600V applications offers :
- very tight parameter distribution
- high ruggedness, temperature stable behaviour
 Low EMI
 Very soft, fast recovery anti-parallel Emitter Controlled HE diode
 Qualified according to JEDEC¹ for target applications
 Pb-free lead plating; RoHS compliant
 Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
C
G
E
PG-TO220-3
Type
IKP06N60T
V_CE
600V
I_{C;Tc=100°C} V_{CE(sat),Tj=25°C} T_j,max
6A
1.5V
175C
Marking
K06T60
Package
PG-TO220-3
Maximum Ratings
Parameter
Collector-emitter voltage, Tj ≥ 25C
DC collector current, limited by T_jmax
T_C = 25C
T_C = 100C
Pulsed collector current, t_p limited by T_jmax
Turn off safe operating area, VCE = 600V, Tj = 175C, tp = 1µs
Diode forward current, limited by T_jmax
T_C = 25C
T_C = 100C
Diode pulsed current, t_p limited by T_jmax
Gate-emitter voltage
Short circuit withstand time²⁾
V_GE = 15V, V_CC  400V, T_j  150C
Power dissipation
T_C = 25C
Operating junction temperature
Storage temperature
Soldering temperature
wavesoldering, 1.6 mm (0.063 in.) from case for 10s
Symbol
V_CE
I_C
I_Cpuls
-
I_F
I_Fpuls
V_GE
t_SC
P_tot
T_j
T_stg
1 _{J-STD-020 and JESD-022}
2) _{Allowed number of short circuits: <1000; time between short circuits: >1s.}
IFAG IPC TD VLS
1
Value
Unit
600
V
12
6
18
A
18
12
6
18
20
V
5
s
88
W
-40...+175
-55...+150
C
260
Rev. 2.5 20.09.2013