IKP04N60T_16 Datasheet, PDF (1/13 Pages) Infineon Technologies AG – IGBT in TRENCHSTOPTM and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode

IKP04N60T
TRENCHSTOP^TM Series
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Low Loss DuoPack : IGBT in TRENCHSTOP^TM and Fieldstop technology
with soft, fast recovery anti-parallel Emitter Controlled HE diode
• Very low VCE(sat) 1.5V (typ.)
• Maximum Junction Temperature 175°C
• Short circuit withstand time 5µs
• Designed for:
- Frequency Converters
- Drives
• TRENCHSTOP^TM and Fieldstop technology for 600V applications offers:
- very tight parameter distribution
- high ruggedness, temperature stable behavior
- very high switching speed
- low VCE(sat)
• Positive temperature coefficient in VCE(sat)
• Low EMI
• Low Gate Charge
• Very soft, fast recovery anti-parallel Emitter Controlled HE diode
• Qualified according to JEDEC¹⁾ for target applications
• Pb-free lead plating; RoHS compliant
• Complete product spectrum and PSpice Models: http://www.infineon.com/igbt/
C
G
E
Type
IKP04N60T
VCE
600V
IC
VCE(sat),Tj=25°C
Tj,max
4A
1.5V
175°C
Marking
K04T60
Package
PG-TO220-3
Maximum Ratings
Parameter
Collector-emitter voltage, Tj ≥ 25°C
DC collector current, limited by Tjmax
TC = 25°C
TC = 100°C
Pulsed collector current, tp limited by Tjmax
Turn off safe operating area, VCE = 600V, Tj = 175°C, tp = 1µs
Diode forward current, limited by Tjmax
TC = 25°C
TC = 100°C
Diode pulsed current, tp limited by Tjmax
Gate-emitter voltage
Short circuit withstand time²⁾
VGE = 15V, VCC ≤ 400V, Tj ≤ 150°C
Power dissipation TC = 25°C
Operating junction temperature
Storage temperature
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
Symbol
VCE
IC
ICpuls
-
IF
IFpuls
VGE
tSC
Ptot
Tj
Tstg
-
1) _{J-STD-020 and JESD-022}
2) _{Allowed number of short circuits: <1000; time between short circuits: >1s.}
Value
600
9.5
6.5
12
12
9.5
6.5
12
±20
5
42
-40...+175
-55...+150
260
Unit
V
A
V
µs
W
°C
IFAG IPC TD VLS
1
Rev. 2.8 17.02.2016