IKP04N60T_09 Datasheet, PDF (1/14 Pages) Infineon Technologies AG – Low Loss DuoPack : IGBT in TrenchStop and Fieldstop technology

TrenchStop^® Series
IKP04N60T
pIJIKI04N60Tdsadsa
Low Loss DuoPack : IGBT in TrenchStop^® and Fieldstop technology
with soft, fast recovery anti-parallel EmCon HE diode
Very low V_CE(sat) 1.5 V (typ.)
C
• Maximum Junction Temperature 175 °C
• Short circuit withstand time – 5μs
• Designed for :
- Frequency Converters
G
E
- Drives
• TrenchStop^® and Fieldstop technology for 600 V applications
offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
- very high switching speed
- low V_CE(sat)
• Positive temperature coefficient in V_CE(sat)
• Low EMI
PG-TO-220-3-1
PG-TO-262-3
• Low Gate Charge
• Very soft, fast recovery anti-parallel EmCon HE diode
• Qualified according to JEDEC¹ for target applications
• Pb-free lead plating; RoHS compliant
• Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
Type
V_CE
I_C
V_{CE(sat),Tj=25°C} T_j,max
Marking
Package
IKP04N60T 600 V 4 A
1.5 V
175 °C
K04T60 PG-TO-220-3-1
IKI04N60T
600 V 4 A
1.5 V
175 °C
K04T60 PG-TO-262-3
Maximum Ratings
Parameter
Symbol
Value
Unit
Collector-emitter voltage
DC collector current, limited by T_jmax
T_C = 25°C
T_C = 100°C
Pulsed collector current, t_p limited by T_jmax
Turn off safe operating area (V_CE ≤ 600V, T_j ≤ 175°C)
Diode forward current, limited by T_jmax
T_C = 25°C
T_C = 100°C
Diode pulsed current, t_p limited by T_jmax
Gate-emitter voltage
Short circuit withstand time²⁾
V_GE = 15V, V_CC ≤ 400V, T_j ≤ 150°C
Power dissipation T_C = 25°C
Operating junction temperature
Storage temperature
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
V_CE
I_C
I_Cpuls
-
I_F
I_Fpuls
V_GE
t_SC
P_tot
T_j
T_stg
-
600
V
A
8
4
12
12
8
4
12
±20
V
5
μs
42
W
-40...+175
°C
-55...+175
260
1 _{J-STD-020 and JESD-022}
2) _{Allowed number of short circuits: <1000; time between short circuits: >1s.}
Power Semiconductors
1
Rev. 2.5 Feb. 09