IKB15N60T_15 Datasheet, PDF (1/13 Pages) Infineon Technologies AG – IGBT in TRENCHSTOP and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode

IKB15N60T
TRENCHSTOP™ Series
q
Low Loss DuoPack : IGBT in TRENCHSTOP™ and Fieldstop technology with soft,
fast recovery anti-parallel Emitter Controlled HE diode
Features:
 Very low VCE(sat) 1.5V (typ.)
 Maximum Junction Temperature 175°C
 Short circuit withstand time 5s
 Designed for frequency inverters for washing machines, fans, pumps and vacuum
cleaners
 TRENCHSTOP™ technology for 600V applications offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
- very high switching speed
 Positive temperature coefficient in VCE(sat)
 Low EMI
 Low Gate Charge
 Qualified according to JEDEC¹ for target applications
 Pb-free lead plating; RoHS compliant
 Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
C
G
E
PG-TO263-3
Type
IKB15N60T
V_CE
600V
I_C
15A
V_{CE(sat),Tj=25°C}
1.5V
T_j,max Marking Code
175C
K15T60
Package
PG-TO263-3
Maximum Ratings
Parameter
Collector-emitter voltage, T_j ≥ 25C
DC collector current, limited by T_jmax
T_C = 25C, value limited by bondwire
T_C = 100C
Pulsed collector current, t_p limited by T_jmax
Turn off safe operating area, V_CE = 600V, T_j = 175C, t_p = 1µs
Diode forward current, limited by T_jmax
T_C = 25C, value limited by bondwire
T_C = 100C
Diode pulsed current, t_p limited by T_jmax
Gate-emitter voltage
Short circuit withstand time²⁾
V_GE = 15V, V_CC  400V, T_j  150C
Power dissipation T_C = 25C
Operating junction temperature
Storage temperature
Soldering temperature (reflow soldering, MSL1)
Symbol
V_CE
I_C
I_Cpuls
-
I_F
I_Fpuls
V_GE
t_SC
P_tot
T_j
T_stg
-
Value
Unit
600
V
26
23
45
A
45
26
23
45
20
V
5
s
130
W
-40...+175
-55...+150
C
260
1 _{J-STD-020 and JESD-022}
2) _{Allowed number of short circuits: <1000; time between short circuits: >1s.}
IFAG IPC TD VLS
1
Rev. 2.8 11.05.2015